دیتاشیت FDH50N50-F133
مشخصات دیتاشیت
| نام دیتاشیت | FDA50N50, FDH50N50 |
|---|---|
| حجم فایل | 468.364 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 11 |
دانلود دیتاشیت FDA50N50, FDH50N50 |
FDA50N50, FDH50N50 Datasheet |
|---|
مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDH50N50-F133
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 625W
- Total Gate Charge (Qg@Vgs): 137nC@10V
- Drain Source Voltage (Vdss): 500V
- Input Capacitance (Ciss@Vds): 6460pF@25V
- Continuous Drain Current (Id): 48A
- Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 105mΩ@24A,10V
- Package: TO-247
- Manufacturer: onsemi
- Series: UniFET™
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 105mOhm @ 24A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 137nC @ 10V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6460pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 625W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
- Base Part Number: FDH50
- detail: N-Channel 500V 48A (Tc) 625W (Tc) Through Hole TO-247-3
